Dr. Johannes Will

Chair for Crystallography and Structural Physics
Staudtstr. 3
D-91058 Erlangen

Room 1.021

Phone: +49 9131 85-25186
Fax: +49 9131 85-25182

Post Doc

Field of work

My research activities are about nanoprecipitates in structural nearly perfect single crystals. The main field is the in-situ observation of the formation, growth and ripening of SiOx precipitates in silicon at a wide temperature range (450-1200°C) and the influence on the kinetics of various dopants like boron or hydrogen. The main technique originates from the dynamical x-ray diffraction and bases on the measurement of thickness dependent Pendellösung oscillations. Additionally we perform ex-situ electron diffraction (TEM) and etching techniques to receive complementary data.

Education

1991 - 1995: Adalbert-Stifter-Elementary school in Erlangen, Germany

1995 - 2004: Emil-von-Behring-Gymnasium in Erlangen

06/2004: Abitur

10/2004 – 02/2010:Studies of Physics at the Friedrich-Alexander Universität Erlangen-Nürnberg

10/2006: Vordiplom in Physics

02/2009 - 02/2010: Diploma thesis at the Chair for Crystallography and Structural Physics

02/2010: Diploma in Physics (Dipl. Phys.)

05/2010: Start of PhD thesis in Physics at the Chair for Crystallography and Structural Physics

Publications

1. Will, J.; Gröschel, A.; Weißer, M.; Magerl, A.; Thickness dependence of the integrated Bragg intensity for statistically disturbed silicon crystals; Appl. Phys. Letters 2011, 98, 041910

2. Will, J; Gröschel, A.; Bergmann, C.; Magerl, A.; In-Situ observation of the oxygen nucleation in silicon with X-Ray single crystal diffraction, Sol. State Phenom., 2011, 178-179, 353-359

3. Gröschel, A.; Will, J.; Bergmann, C.; Grillenberger, H., Eichler, S.; Scheffer-Czygan, M.; Magerl, A.; Structural Defect Studies of Semiconductor Crystals with Laue Topography, Sol. State Phenom., 2011, 178-179, 360-365

4. Will, J; Gröschel, A.; Bergmann, C.; Magerl, A.; In-Situ measurement of thickness-dependent Pendellösung oscillations from a precipitation process in silicon at 650°C, Phys. Status Solidi C, 2012, 10-11, 1920-1923

5. Will, J.; Groschel, A.; Kot, D.; Schubert, M. A.; Bergmann, C.; Steinruck, H.-G.; Kissinger, G.; Magerl, A.; Oxygen diffusivity in silicon derived from dynamical X-ray diffraction; J. Appl. Phys. 2013, 7, 073508